MRF6S18100NR1资料

Freescale SemiconductorTechnical Data

Document Number: MRF6S18100N

Rev. 1, 5/2006

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications withfrequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA andmulticarrier amplifier applications.

GSM Application

•Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout =

100 Watts, Full Frequency Band (1805-1880 MHz or 1930-1990 MHz)Power Gain — 14.5 dBDrain Efficiency — 49%GSM EDGE Application

•Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 40 Watts Avg., Full Frequency Band (1805-1880 MHz or1930-1990 MHz)

Power Gain — 15 dBDrain Efficiency — 35%

Spectral Regrowth @ 400 kHz Offset = -63 dBcSpectral Regrowth @ 600 kHz Offset = -76 dBcEVM — 2% rms

•Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CWOutput PowerFeatures

•Characterized with Series Equivalent Large-Signal Impedance Parameters•Internally Matched for Ease of Use

•Qualified Up to a Maximum of 32 VDD Operation•Integrated ESD Protection

•Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications

•200°C Capable Plastic Package•RoHS Compliant

•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6S18100NR1MRF6S18100NBR11805-1990 MHz, 100 W, 28 VGSM/GSM EDGELATERAL N-CHANNELRF POWER MOSFETsCASE 1486-03, STYLE 1TO-270 WB-4MRF6S18100NR1CASE 1484-04, STYLE 1TO-272 WB-4MRF6S18100NBR1Table 1. Maximum Ratings

Rating

Drain-Source VoltageGate-Source Voltage

Total Device Dissipation @ TC = 25°CDerate above 25°CStorage Temperature RangeOperating Junction Temperature

SymbolVDSSVGSPDTstgTJ

Value -0.5, +68 -0.5, +123431.96-65 to +175

200

UnitVdcVdcWW/°C°C°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to CaseCase Temperature 80°C, 100 CWCase Temperature 77°C, 40 CW

SymbolRθJC

Value(1,2)0.510.62

Unit°C/W

1.MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.

2.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

© Freescale Semiconductor, Inc., 2006. All rights reserved.MRF6S18100NR1 MRF6S18100NBR1 1RF Device DataFreescale Semiconductor元器件交易网www.cecb2b.com

Table 3. ESD Protection Characteristics

Test Methodology

Human Body Model (per JESD22-A114)Machine Model (per EIA/JESD22-A115)Charge Device Model (per JESD22-C101)

Class1B (Minimum)A (Minimum)IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Per JESD 22-A113, IPC/JEDEC J-STD-020

Rating3

Package Peak Temperature

260

Unit°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Off Characteristics

Zero Gate Voltage Drain Leakage Current(VDS = 68 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current(VDS = 28 Vdc, VGS = 0 Vdc)Gate-Source Leakage Current(VGS = 5 Vdc, VDS = 0 Vdc)On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 330 μAdc)

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 900 mAdc, Measured in Functional Test)Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 3.3 Adc)Forward Transconductance(VDS = 10 Vdc, ID = 3.3 Adc)Dynamic Characteristics(1)

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)Power GainDrain EfficiencyInput Return Loss

Pout @ 1 dB Compression Point

1.Part internally matched both on input and output.

(continued)

Crss

—

1.5

—

pF

VGS(th)VGS(Q)VDS(on)gfs

1.61.5——

22.80.245.3

33.5——

VdcVdcVdcS

IDSSIDSSIGSS

———

———

101500

μAdcμAdcnAdc

Symbol

Min

Typ

Max

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W, IDQ = 900 mA, f = 1930-1990 MHz

GpsηDIRLP1dB

1347—100

14.549-12110

16—-9—

dB%dBW

MRF6S18100NR1 MRF6S18100NBR1 2

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Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 40 W Avg., 1805-1880 MHz or 1930-1990 MHz EDGE ModulationPower GainDrain EfficiencyError Vector Magnitude

Spectral Regrowth at 400 kHz OffsetSpectral Regrowth at 600 kHz Offset

GpsηDEVMSR1SR2

—————

15352-63-76

—————

dB%% rmsdBcdBc

Typical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W, 1805-1880 MHzPower GainDrain EfficiencyInput Return Loss

Pout @ 1 dB Compression Point

GpsηDIRLP1dB

————

14.549-12110

————

dB%dBW

MRF6S18100NR1 MRF6S18100NBR1

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R1VBIAS+R2C1C2Z6Z13RFINPUTR3Z1C6Z2Z3Z4Z5Z7Z8Z9Z10Z11C10Z12RFOUTPUTC3C4C5C14VSUPPLYC7C8DUTZ14C9VSUPPLYC11C12C13Z1, Z12Z2*Z3*Z4*Z5Z6Z7, Z80.250″ x 0.083″ Microstrip0.450″ x 0.083″ Microstrip0.535″ x 0.083″ Microstrip0.540″ x 0.083″ Microstrip0.365″ x 1.000″ Microstrip1.190″ x 0.080″ Microstrip0.115″ x 1.000″ Microstrip

Z9Z10*Z11*Z13, Z14PCB

0.485″ x 1.000″ Microstrip0.590″ x 0.083″ Microstrip0.805″ x 0.083″ Microstrip0.870″ x 0.080″ Microstrip

Taconic TLX8-0300, 0.030″, εr = 2.55

*Variable for tuning.

Figure 1. MRF6S18100NR1(NBR1) Test Circuit Schematic — 1930-1990 MHz

Table 6. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values — 1930-1990 MHz

Part

C1

C2, C3, C6, C10, C11C4, C5, C12, C13C7C8C9C14R1, R2R3

Description

100 nF Chip Capacitor (1206)6.8 pF 600B Chip Capacitors4.7 μF Chip Capacitors (1812)0.3 pF 700B Chip Capacitor1.3 pF 600B Chip Capacitor0.5 pF 600B Chip Capacitor

470 μF, 63 V Electrolytic Capacitor, Radial10 kΩ, 1/4 W Chip Resistors (1206)10 Ω, 1/4 W Chip Resistor (1206)

Part Number

1206C104KAT600B6R8BWC4532X5R1H475MT700B0R3BW600B1R3BW600B0R5BW13661471

ManufacturerAVXATCTDKATCATCATCPhilips

MRF6S18100NR1 MRF6S18100NBR1 4

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C14R1R2C1C2C3C4C5R3C6C7C8CUT OUT AREAC9C10C11C12C13MRF6S18100NRev. 0Figure 2. MRF6S18100NR1(NBR1) Test Circuit Component Layout — 1930-1990 MHz

MRF6S18100NR1 MRF6S18100NBR1

RF Device Data

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TYPICAL CHARACTERISTICS — 1930-1990 MHz

17

ηDηD, DRAIN EFFICIENCY (%)Gps, POWER GAIN (dB)16

IRL15

Gps14

VDD = 28 VdcIDQ = 900 mA131900

1920

1940

1960

1980

2000

202020

−40

304050

−10

60

0

IRL, INPUT RETURN LOSS (dB)IRL, INPUT RETURN LOSS (dB)−20

−30

f, FREQUENCY (MHz)

Figure 3. Power Gain, Input Return Loss and DrainEfficiency versus Frequency @ Pout = 100 Watts

17600ηD, DRAIN EFFICIENCY (%)Gps, POWER GAIN (dB)16IRL15ηDVDD = 28 VdcIDQ = 900 mA1319001920194019601980200050−1040Gps30−2014−30202020−40f, FREQUENCY (MHz)Figure 4. Power Gain, Input Return Loss and DrainEfficiency versus Frequency @ Pout = 40 Watts1615Gps, POWER GAIN (dB)14

665 mA13

450 mA12

IDQ = 1350 mAGps, POWER GAIN (dB)1125 mA900 mA1614121028 V82100

0

20

40

60

80

20 V100

12024 VVDD = 12 V16 VIDQ = 900 mAf = 1960 MHz140

16032 VVDD = 28 Vdcf = 1960 MHz111

10

Pout, OUTPUT POWER (WATTS)

Pout, OUTPUT POWER (WATTS) CW

Figure 5. Power Gain versus Output PowerFigure 6. Power Gain versus Output Power

MRF6S18100NR1 MRF6S18100NBR1 6

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TYPICAL CHARACTERISTICS — 1930-1990 MHz

TC = −30_CηDGps−30_C25_C85_C121081

10

Pout, OUTPUT POWER (WATTS) CW

100

20100EVM, ERROR VECTOR MAGNITUDE (% rms)VDD = 28 VdcIDQ = 900 mAf = 1960 MHz525_C5085_C4030ηD, DRAIN EFFICIENCY (%)4VDD = 28 VdcIDQ = 700 mA18Gps, POWER GAIN (dB)1614

Pout = 61 W Avg.344 W Avg.220 W Avg.101920

1940

1960

1980

2000

f, FREQUENCY (MHz)

Figure 7. Power Gain and Drain Efficiency

versus CW Output Power

SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)Figure 8. EVM versus Frequency

12EVM, ERROR VECTOR MAGNITUDE (% rms)108201

ηD, DRAIN EFFICIENCY (%)VDD = 28 VdcIDQ = 700 mAf = 1960 MHzEDGE Modulation60

TC = −30_C5040

25_C3020100100

−50−55−60−65−70−75−80

SR @ 400 kHzPout = 61 W Avg.44 W Avg.20 W Avg.SR @ 600 kHzVDD = 28 VdcIDQ = 700 mAf = 1960 MHzEDGE ModulationηD85_CEVM61 W Avg.44 W Avg.20 W Avg.1960

1980

10

Pout, OUTPUT POWER (WATTS) AVG.

−851900

1920194020002020

f, FREQUENCY (MHz)

Figure 9. EVM and Drain Efficiency versus

Output PowerFigure 10. Spectral Regrowth at 400 kHz and

600 kHz versus Frequency

−40SPECTRAL REGROWTH @ 400 kHz (dBc)−45−50

25_C−55−60−65−70−750

20

40

60

80

100

Pout, OUTPUT POWER (WATTS)

TC = −30_CSPECTRAL REGROWTH @ 600 kHz (dBc)VDD = 28 Vdc, IDQ = 700 mAf = 1960 MHz, EDGE Modulation85_C−55−60−6525_C−70−75−80−850

20

40

60

80

100

Pout, OUTPUT POWER (WATTS)

VDD = 28 Vdc, IDQ = 700 mAf = 1960 MHz, EDGE ModulationTC = −30_C85_CFigure 11. Spectral Regrowth at 400 kHz

versus Output PowerFigure 12. Spectral Regrowth at 600 kHz

versus Output Power

MRF6S18100NR1 MRF6S18100NBR1

RF Device Data

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TYPICAL CHARACTERISTICS

1.E+09MTTF FACTOR (HOURS X AMPS2)1.E+08

1.E+07

1.E+06

90

100110120130140150160170180190200210

TJ, JUNCTION TEMPERATURE (°C)

This above graph displays calculated MTTF in hours x ampere2drain current. Life tests at elevated temperatures have correlated tobetter than ±10% of the theoretical prediction for metal failure. DivideMTTF factor by ID2 for MTTF in a particular application.

Figure 13. MTTF Factor versus Junction Temperature

GSM TEST SIGNAL

−10−20−30−40−50(dB)−60−70−80−90−100−110

Center 1.96 GHz

200 kHz

Span 2 MHz

400 kHz600 kHz400 kHz600 kHzReference PowerVBW = 30 kHzSweep Time = 70 msRBW = 30 kHzFigure 14. EDGE Spectrum

MRF6S18100NR1 MRF6S18100NBR1 8

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Zo = 5 Ωf = 2020 MHzf = 2020 MHzZloadZsourcef = 1900 MHzf = 1900 MHzVDD = 28 Vdc, IDQ = 900 mA, Pout = 100 WfMHz19001930196019902020

Zsource

W2.80 - j4.532.71 - j4.272.63 - j4.032.56 - j3.792.51 - j3.57

ZloadW1.75 - j3.521.67 - j3.251.59 - j2.991.52 - j2.741.47 - j2.51

Zsource=Test circuit impedance as measured from

gate to ground.Zload

=Test circuit impedance as measured from drain to ground.

InputMatchingNetworkDeviceUnderTestOutputMatchingNetwork

Z

source

Z

load

Figure 15. Series Equivalent Source and Load Impedance — 1930-1990 MHz

MRF6S18100NR1 MRF6S18100NBR1

RF Device Data

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R1VBIAS+R2C1C2Z6Z14RFINPUTR3Z1C6Z2Z3Z4Z5Z7Z8Z9Z10Z11Z12C13Z13RFOUTPUTC3C4C5C17VSUPPLYC7C8C9DUTZ15C10C11C12VSUPPLYC14C15C16Z1, Z13Z2*Z3*Z4*Z5Z6Z7, Z80.250″ x 0.083″ Microstrip0.620″ x 0.083″ Microstrip0.715″ x 0.083″ Microstrip0.190″ x 0.083″ Microstrip0.365″ x 1.000″ Microstrip1.190″ x 0.080″ Microstrip0.115″ x 1.000″ Microstrip

Z9Z10*Z11*Z12*Z14, Z15PCB

0.485″ x 1.000″ Microstrip0.080″ x 0.083″ Microstrip0.340″ x 0.083″ Microstrip0.975″ x 0.083″ Microstrip0.960″ x 0.080″ Microstrip

Taconic TLX8-0300, 0.030″, εr = 2.55

*Variable for tuning.

Figure 16. MRF6S18100NR1(NBR1) Test Circuit Schematic — 1805-1880 MHz

Table 7. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values — 1805-1880 MHz

Part

C1

C2, C3, C6, C13, C14C4, C5, C15, C16C7, C8, C11, C12C9C10C17R1, R2R3

Description

100 nF Chip Capacitor (1206)8.2 pF 600B Chip Capacitors4.7 μF Chip Capacitors (1812)0.2 pF 700B Chip Capacitors1 pF 600B Chip Capacitor0.5 pF 600B Chip Capacitor

470 μF, 63 V Electrolytic Capacitor, Radial10 kΩ, 1/4 W Chip Resistor (1206)10 Ω, 1/4 W Chip Resistor (1206)

Part Number

1206C104KAT600B8R2BWC4532X5R1H475MT700B0R2BW600B1R0BW600B0R5BW13661471

ManufacturerAVXATCTDKATCATCATCPhilips

MRF6S18100NR1 MRF6S18100NBR1 10

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C17R1R2C1C2C3C4C5R3C6CUT OUT AREAC7C8C9C10C13C11C12C14C15C16MRF6S18100NRev. 0Figure 17. MRF6S18100NR1(NBR1) Test Circuit Component Layout — 1805-1880 MHz

MRF6S18100NR1 MRF6S18100NBR1

RF Device Data

Freescale Semiconductor

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TYPICAL CHARACTERISTICS — 1805-1880 MHz

1716Gps, POWER GAIN (dB)15

ηD6050ηD, DRAIN EFFICIENCY (%)40

0−10

IRL, INPUT RETURN LOSS (dB)IRL, INPUT RETURN LOSS (dB)Gps14

IRL30−20−30

13

VDD = 28 VdcIDQ = 900 mA1810

1820

1830

1840

1850

1860

1870

20101880

121800

−40

f, FREQUENCY (MHz)

Figure 18. Power Gain, Input Return Loss and DrainEfficiency versus Frequency @ Pout = 100 Watts

16IRLGps50−1015ηD40ηD, DRAIN EFFICIENCY (%)Gps, POWER GAIN (dB)−2014VDD = 28 VdcIDQ = 900 mA13180018101820183018401850186030−302018701880−40f, FREQUENCY (MHz)Figure 19. Power Gain, Input Return Loss and DrainEfficiency versus Frequency @ Pout = 40 Watts6EVM, ERROR VECTOR MAGNITUDE (% rms)5

VDD = 28 VdcIDQ = 700 mAPout = 60 W Avg.4

EVM, ERROR VECTOR MAGNITUDE (% rms)1086ηD4TC = 25_CEVM3020

3

42 W Avg.211800

25 W Avg.1820

1840

1860

1880

1900

201

10

100100

f, FREQUENCY (MHz)

Pout, OUTPUT POWER (WATTS) AVG.

Figure 20. EVM versus Frequency

Figure 21. EVM and Drain Efficiency versus

Output Power

MRF6S18100NR1 MRF6S18100NBR1 12

RF Device Data

Freescale Semiconductor

ηD, DRAIN EFFICIENCY (%)VDD = 28 VdcIDQ = 700 mAf = 1840 MHzEDGE Modulation5040

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TYPICAL CHARACTERISTICS — 1805-1880 MHZ

SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)−45−50−55−60−65−70−75−80−851780

25 W Avg.1800

1820

1840

1860

1880

1900

1920

SR @ 600 kHz25 W Avg.60 W Avg.42 W Avg.VDD = 28 VdcIDQ = 700 mAf = 1960 MHzSR @ 400 kHzPout = 60 W Avg.42 W Avg.f, FREQUENCY (MHz)

Figure 22. Spectral Regrowth at 400 kHz and

600 kHz versus Frequency

−45SPECTRAL REGROWTH @ 400 kHz (dBc)−50−55−60−65−70−750

20

40

60

80

Pout, OUTPUT POWER (WATTS)

TC = 25_CSPECTRAL REGROWTH @ 600 kHz (dBc)VDD = 28 Vdc, IDQ = 700 mAf = 1840 MHz, EDGE Modulation−60

VDD = 28 Vdc, IDQ = 700 mAf = 1840 MHz, EDGE Modulation−65

−70

TC = 25_C−75−80−850

20

406080

Pout, OUTPUT POWER (WATTS)

Figure 23. Spectral Regrowth at 400 kHz

versus Output PowerFigure 24. Spectral Regrowth at 600 kHz

versus Output Power

MRF6S18100NR1 MRF6S18100NBR1

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Zo = 5 Ωf = 1900 MHzZloadf = 1780 MHzf = 1900 MHzZsource

f = 1780 MHz

VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 WfMHz17801804184018801900

Zsource

W1.96 - j4.091.90 - j3.861.82 - j3.531.76 - j3.161.72 - j2.97

ZloadW1.94 - j2.901.88 - j2.671.80 - j2.421.73 - j1.991.70 - j1.82

Zsource=Test circuit impedance as measured from

gate to ground.Zload

=Test circuit impedance as measured from drain to ground.

InputMatchingNetworkDeviceUnderTestOutputMatchingNetwork

Z

source

Z

load

Figure 25. Series Equivalent Source and Load Impedance — 1805-1880 MHz

MRF6S18100NR1 MRF6S18100NBR1 14

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NOTES

MRF6S18100NR1 MRF6S18100NBR1

RF Device Data

Freescale Semiconductor

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PACKAGE DIMENSIONS

BE1E32XAGATE LEADDRAIN LEADD14XDeb1aaaMCA4XD2c1HDATUMPLANEZONE J2X2XEFA1A2E2E5E42XANOTE 7CSEATINGPLANEPIN 5NOTE 8NOTES:1.CONTROLLING DIMENSION: INCH.2.INTERPRET DIMENSIONS AND TOLERANCESPER ASME Y14.5M−1994.3.DATUM PLANE −H− IS LOCATED AT THE TOP OFLEAD AND IS COINCIDENT WITH THE LEADWHERE THE LEAD EXITS THE PLASTIC BODY ATTHE TOP OF THE PARTING LINE.4.DIMENSIONS “D\" AND “E1\" DO NOT INCLUDEMOLD PROTRUSION. ALLOWABLE PROTRUSIONIS .006 PER SIDE. DIMENSIONS “D\" AND “E1\" DOINCLUDE MOLD MISMATCH AND ARE DETER−MINED AT DATUM PLANE −H−.5.DIMENSION “b1\" DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE .005 TOTAL IN EXCESSOF THE “b1\" DIMENSION AT MAXIMUM MATERIALCONDITION.6.DATUMS −A− AND −B− TO BE DETERMINED ATDATUM PLANE −H−.7.DIMENSION A2 APPLIES WITHIN ZONE “J\" ONLY.8.HATCHING REPRESENTS THE EXPOSED AREAOF THE HEAT SLUG.DIMAA1A2DD1D2D3EE1E2E3E4E5Fb1c1eaaaINCHESMINMAX.100.104.039.043.040.042.712.720.688.692.011.019.600−−−.551.559.353.357.132.140.124.132.270−−−.346.350.025 BSC.1.170.007.011.106 BSC.004DRAINDRAINGATEGATESOURCEMILLIMETERSMINMAX2.542.0.991.091.021.0718.0818.2917.4817.580.280.4815.24−−−1414.28.979.073.353.563.153.356.86−−−8.798.0. BSC4.174.320.180.282.69 BSC0.1041D332E5BOTTOM VIEWSTYLE 1:PIN 1. 2. 3. 4. 5.CASE 1486-03ISSUE CTO-270 WB-4MRF6S18100NR1

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MRF6S18100NR1 MRF6S18100NBR1

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Document Number: MRF6S18100NRev. 1, 5/2006Information in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. There are no express orimplied copyright licenses granted hereunder to design or fabricate any integratedcircuits or integrated circuits based on the information in this document.

Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. “Typical” parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including “Typicals”, must be validated for each customer application bycustomer’s technical experts. Freescale Semiconductor does not convey any licenseunder its patent rights nor the rights of others. Freescale Semiconductor products arenot designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life,or for any other application in which the failure of the Freescale Semiconductor productcould create a situation where personal injury or death may occur. Should Buyerpurchase or use Freescale Semiconductor products for any such unintended orunauthorized application, Buyer shall indemnify and hold Freescale Semiconductorand its officers, employees, subsidiaries, affiliates, and distributors harmless against allclaims, costs, damages, and expenses, and reasonable attorney fees arising out of,directly or indirectly, any claim of personal injury or death associated with suchunintended or unauthorized use, even if such claim alleges that FreescaleSemiconductor was negligent regarding the design or manufacture of the part.Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.All other product or service names are the property of their respective owners.© Freescale Semiconductor, Inc. 2006. All rights reserved.

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