7MBP100RA120资料

7MBP100RA120

IGBT-IPM R series

Features

· Temperature protection provided by directly detecting the junction temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit

1200V / 100A 7 in one-package

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

ItemDC bus voltageDC bus voltage (surge)DC bus voltage (short operating)Collector-Emitter voltageDB Reverse voltageINV Collector current DC 1ms DC Collector power dissipation One transistorDB Collector current DC 1ms Forward current of Diode Collector power dissipation One transistorJunction temperatureInput voltage of power supply for Pre-DriverInput signal voltageInput signal currentAlarm signal voltageAlarm signal currentStorage temperatureOperating case temperatureIsolating voltage (Case-Terminal)Screw torque Mounting (M5) Terminal (M5)Symbol Rating UnitMin. Max.VDCVDC(surge)VSCVCESVRICICP-ICPCICICPIFPCTjVCC *1Vin *2IinVALM *3IALM *4TstgTopViso *5 0 0200 0 - - - - - - - - - - 0 0 - 0 - -40 -20 - - - 9001000 80012001200 100 200 100 735 50 100 50 400 150 20 Vz 1 Vcc 15 125 100AC2.53.5 *63.5 *6VVVVVAAAWAAAW°CVVmAVmA°C°CkVN·mN·mFig.1 Measurement of case temperature*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.*3 Apply VALM between terminal No. 16 and 10.*4 Apply IALM to terminal No. 16.*5 50Hz/60Hz sine wave 1 minute.*6 Recommendable Value : 2.5 to 3.0 N·mElectrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)Item Symbol Condition Min. Typ. Max. UnitVCE=1200V input terminal open– – 1.0 mAINV Collector current at off signal inputICESIc=100A– – 2.6 V Collector-Emitter saturation voltageVCE(sat)-Ic=100A– – 3.0 V Forward voltage of FWDVFVCE=1200V input terminal open– – 1.0 mADB Collector current at off signal inputICESIc=50A– – 2.6 V Collector-Emitter saturation voltageVCE(sat)-Ic=50A– – 3.3 V Forward voltage of DiodeVF7MBP100RA120Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)IGBT-IPMItem Symbol Condition Min. Typ. Max. Unitfsw=0 to 15kHz Tc=-20 to 100°C *7mAPower supply current of P-line side Pre-driver(one unit)I 3 - 18fsw=0 to 15kHz Tc=-20 to 100°C *7mAICCNPower supply current of N-line side three Pre-driver 10 - 65ONVin(th)Input signal threshold voltage (on/off) 1.00 1.35 1.70VOFF 1.70 2.05 2.40VRin=20k ohmVVZInput zener voltage - 8.0 -VDC=0V, Ic=0A, Case temperature Fig.1 110°CTCOHOver heating protection temperature level - 125HysteresisIGBT chips over heating protection temperature levelHysteresisCollector current protection level INV DBOver current protection delay timeUnder voltage protection levelHysteresisAlarm signal hold timeSC protection delay timeLimiting resistor for alarm*7 Switching frequency of IPMTCHTjOHTjHIOCIOCtDOCVUVVHtALMtSCRALMsurface of IGBT chipsTj=125°CTj=125°CTj=25°C Fig.2 - 150 - 150 75 - 11.0 0.2 1.5 -1425 20 - 20 - - 10 - - 2 -1500 - - - - - - 12.5 - - 121575°C°C°CAAµsVVmsµsohmTj=25°C Fig.3Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)Item Symbol Condition Min. Typ. Max. UnitSwitching time (IGBT)µston IC=100A, VDC=600V 0.3 - -Switching time (FWD)tofftrr IF=100A, VDC=600V- - 3.6- - 0.4µsµsThermal characteristics(Tc=25°C)Item Symbol Typ. Max. UnitRth(j-c)Junction to Case thermal resistanceINV IGBT - 0.17°C/WRth(j-c) FWD - 0.36°C/WRth(j-c)DB IGBT - 0.31°C/WRth(c-f)Case to fin thermal resistance with compound 0.05 -°C/WRecommendable value

Item Symbol Min. Typ. Max. UnitDC bus voltageVDC 200 - 800 VOperating power supply voltage range of Pre-driverVCC 13.5 15 16.5 VSwitching frequency of IPMfSW 1 - 20 kHzScrew torque Mounting (M5) - 2.5 - 3.0 N·m Terminal (M5) - 2.5 - 3.0 N·m元器件交易网www.cecb2b.com

7MBP100RA120Block diagram

IGBT-IPMPre-drivers include following functionsa) Amplifier for driverb) Short circuit protection

c) Undervoltage lockout circuitd) Over current protection

e) IGBT chip over heating protection

Outline drawings, mm

Mass : 920g

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7MBP100RA120Characteristics (Representative)

control circuit

Power supply current vs. Switching frequency

Tj=100°C70

P-side)A60N-sideVcc=17Vm( ccI50Vcc=15V : tnerr40Vcc=13Vucy lpp30us re20Vcc=17VowVcc=15VPVcc=13V100

0510152025Switching frequency : fsw (kHz)

Under voltage vs. Junction temperature

1412

)V10( TVUV8 :ega6lto vred4nU20

20406080100120140

Junction temperature : Tj (°C)Alarm hold time vs. Power supply voltage

3

)2.5

ecSTj=125°Cm( 2

MTj=25°CLAt : 1.5

emit dlo1

h marl0.5

A012

131415161718

Power supply voltage : Vcc (V)

IGBT-IPMInput signal threshold voltagevs. Power supply voltage

Tj=25°C2.5Tj=125°Cegat2

loV)( vd) } Vin(off)flofhon(1.5

} Vin(on)esirVh,t n)laongn(i1

i V s:tupnI0.5

012

13

1415161718

Power supply voltage : Vcc (V)

Under voltage hysterisis vs. Jnction temperature

1

V)( HV0.8

: isisret0.6

ysh egat0.4

lov erdnU0.2

0

20406080100120140

Junction temperature : Tj (°C)

Over heating characteristicsTcOH,TjOH,TcH,TjH vs. Vcc

200

TjOH)C°( 150

Hj,THTcOHcT : s100

isiretsyh HO50

TcH,TjH0

12131415161718

Power supply voltage : Vcc (V)

Over heating protection : TcOH,TjOH (°C)元器件交易网www.cecb2b.com

7MBP100RA120Inverter

Collector current vs. Collector-Emitter voltage

Tj=25°C160

Vcc=15VVcc=17V140

)AVcc=13V( 120cI : t100enrruC80 rotcel60loC40200

00.511.522.53

Collector-Emitter voltage : Vce (V)

Switching time vs. Collector current10000Edc=600V,Vcc=15V,Tj=25°C

)ecnStoff( ft,ff1000

tonot,not :e tfimt gn100

ihctiwS100

20

40

6080100120140

160

Collector current : Ic (A)

Forward current vs. Forward voltage

160140125°C25°CA)120( fI : t100nerru80C dar60worF402000

0.5

11.522.5

3

Forward voltage : Vf (V)

IGBT-IPMCollector current vs. Collector-Emitter voltage

Tj=125°C160Vcc=15V140Vcc=17VA)( 120 cIVcc=13V : nt100eurrC80r otec60lloC40200

0

0.511.522.53

Collector-Emitter voltage : Vce (V)

Switching time vs. Collector current10000Edc=600V,Vcc=15V,Tj=125°C)toffecnS( ft,ff1000

tonot,not tf:e imt gn100

ihctiwS10

020

406080100120140160

Collector current : Ic (A)

Reverse recovery characteristics

trr,Irr vs. IF

trr125°Cc)eSnrr(100t :trr25°C emit eryIrr125°Cvocer eIrr25°CserevR1002040

6080100120140160

Forward current : IF(A)

Reverse recovery current : Irr(A)元器件交易网www.cecb2b.com

7MBP100RA120Transient thermal resistance

1)W/CFWD° ( )-cjh(tR : IGBTec0.1

natsise rlarmehT0.010.001

0.01

0.1

1

Pulse width :Pw (sec)

Power derating for IGBT

(per device)

800)W700 (c P600 :noiat500pissiD400 erwo300 Pert200eclloC10000

20

406080100120140160

Case Temperature : Tc (°C)Switching Loss vs. Collector Current

Edc=600V,Vcc=15V,Tj=25°C

40e)lcy35/cJm( 30 rrE,ff25oE,no20EonE : s15soEoffl gn10

ihcErrtiw5S00

20

40

60

80

100

120

140

160Collector current : Ic (A)

IGBT-IPMReversed biased safe operating area

Vcc=15V,Tj 125°C<1400=1200A)( c1000I : tne800rurSCSOA cor600(non-repetitive pulse)teclloC400200

RBSOA0(Repetitive pulse)0

200

400

600

800

1000

1200

1400

Collector-Emitter voltage : Vce (V)

Power derating for FWD

350(per device)

)W300 (c P: n250oiatpi200ssiD er150wo P100ertecllo50C0

020406080100120140160

Case Temperature : Tc (°C)

Switching Loss vs. Collector CurrentEdc=600V,Vcc=15V,Tj=125°C

40e)lEonyc35/cJm(30 rrE,f25foE,n20EoffoE : s15osl gn10Errihctiw5S00

20406080100120140160

Collector current : Ic (A)

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7MBP100RA120IGBT-IPMOver current protection vs. Junction temperature

Vcc=15V

400Over current protection level : Ioc(A)3503002502001501005000

20

40

60

80

100

120

140

Junction temperature : Tj(°C)

元器件交易网www.cecb2b.com

7MBP100RA120Brake

Collector current vs. Collector-Emitter voltage

Tj=25°C80Vcc=15V70

Vcc=17V)Vcc=13VA(60 cI :nt50rerCu40r octle30lCo20100

00.511.522.53

Collector-Emitter voltage : Vce (V)

Transient thermal resistance

1)W/C°IGBT ( )-cjh(tR : ecn0.1

atsise rlarmehT0.010.001

0.01

0.1

1

Pulse width :Pw (sec)

Power derating for IGBT

(per device)

400

)W350( cP :300n oiatp250issiD200 rweo150P retc100leloC500

0

20

40

60

80

100

120

140

160

Case Temperature : Tc (°C)

IGBT-IPMCollector current vs. Collector-Emitter voltage

Tj=125°C80Vcc=15V70

Vcc=17V)A( Vcc=13V 60cI : tn50erruC40 rotce30lloC2010000.511.522.53Collector-Emitter voltage : Vce (V)

Reversed biased safe operating area

Vcc=15V,Tj 125°C700600)A( 500Ic :nt400rercuSCSOA r300(non-repetitive pulse)tocleloC200100RBSOA(Repetitive pulse)0

0200400600800100012001400Collector-Emitter voltage : Vce (V)

Over current protection vs. Junction temperature

Vcc=15V

200A)c(oI : le150

evln oitecotr100

p nteurr cr50

evO0

020

406080100120140

Junction temperature : Tj(°C)