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专利名称：Process for preparing high purity
polycrystalline silicon
发明人：Ikeda, Hiroshi,Tsunashima, Makoto申请号：EP88103728.7申请日：19880309公开号：EP0282037A2公开日：19880914
摘要：Polycrystalline silicon having a purity not lower than 99.9999% is produced bydecomposition of polychloropolysilane which can be easily purified by distillation.
申请人：MITSUBISHI KINZOKU KABUSHIKI KAISHA
地址：5-2, Otemachi 1-chome Chiyoda-ku Tokyo 100 JP
国籍：JP
代理机构：von Füner, Alexander, Dr.
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