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专利名称：Integrated circuits and methods of forming
the same with effective dummy gate capremoval
发明人：Klaus Hempel,Dina Triyoso申请号：US14567544申请日：20141211公开号：US09917016B2公开日：20180313
专利附图：
摘要：Integrated circuits and methods of forming the same are provided. Anexemplary method of forming an integrated circuit includes forming a dummy gatestructure overlying a semiconductor substrate. The dummy gate structure includes agate dielectric layer, a dummy gate layer, an etch stop layer, and a dummy gate cap layer.First sidewall spacers are formed adjacent to sidewalls of the dummy gate structure. Asource and drain region are formed in the semiconductor substrate adjacent to the firstsidewall spacers. A dielectric material is deposited adjacent to the first sidewall spacers.The dummy gate cap layer is etched with a first etchant selective thereto after depositingthe dielectric material. The etch stop layer is etched with a second etchant that isselective thereto. The dummy gate layer is etched to form a gate recess, and a gate
material is deposited in the gate recess.
申请人：GLOBALFOUNDRIES, Inc.
地址：Grand Cayman KY
国籍：KY
代理机构：Lorenz & Kopf, LLP
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