专利内容由知识产权出版社提供
专利名称：Forming of high aspect ratio conductive
structure using injection molded solder
发明人：Robert A. Groves,Peter A. Gruber,Kevin S.
Petrarca,Richard P. Volant,George F. Walker
申请号：US10905013申请日：20041209公开号：US07273806B2公开日：20070925
专利附图：
摘要：Methods of forming a conductive structure on a substrate prior to packaging,and a test probe structure generated according to the method, are disclosed. The
conductive structure includes a high aspect ratio structure formed by injected moldedsolder. The invention can be applied to form passive elements and interconnects on aconventional semiconductor substrate after the typical BEOL, and prior to packaging. Themethod may provide better electromigration characteristics, lower resistivity, and higherQ factors for conductive structures. In addition, the method is backwardly compatibleand customizable.
申请人：Robert A. Groves,Peter A. Gruber,Kevin S. Petrarca,Richard P. Volant,George F.Walker
地址：Highland NY US,Mohegan Lake NY US,Newburgh NY US,New Fairfield CTUS,New York NY US
国籍：US,US,US,US,US
代理机构：Hoffman, Warnick & D'Alessandro LLC
代理人：Lisa U. Jaklitsch
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