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Intelligent Power Devices (IPDs)
MIP517Silicon MOSFET type integrated circuit■Features•Built-in five protection functions. (over-current, over-voltage, load-short-circuit, over heat, ESD)•Driving directly from CMOS (microcomputer) is possible.•Although it is a small package, it has resistance of low heat. (Whenmounted in a substrate.)0.95452.90+0.20–0.051.9±0.10.9560.251.50+–0.050.22.8+–0.3Unit : mm0.16+0.10–0.06■Applications•Lamp-Solenoid, driver•Motor driver3210.30+0.10–0.050.50+0.10–0.0510°0.21.1+–0.1ParameterDrain-source voltageOutput currentInput voltageInput currentDrain clamp energy endurance *1Power dissipation 1 *2Power dissipation 2 *3Operating ambient temperatureChannel temperatureStorage temperatureSymbolVDSIOVINIINECLPPD1PD2ToprTchTstgRating− 0.5 to +450.7− 0.5 to +6.0±21.80.20.8−40 to +85150−55 to +150UnitVAVmAmJWW°C°C°CMarking Symbol: MCNote)*1:L = 10 mH, IL = 0.6 A, VDD = 20 V, 1 pulse, TC = 25°C*2:Single unit*3:Mounting on the PCB (40 mm2, thickness 1.7mm glass epoxysubstrate) (Ta = 25°C)■Block DiagramDrainOver-currentprotectionLoad short-circuitprotectionInGate cutoffcircuitESD protectionOver-heatprotectionOver-voltageprotectionSourcePublication date: November 2003
SLB00073AED
0 to 0.10.31.1+–0.1■Absolute Maximum Ratings TC = 25°C ± 3°C0.65±0.151 : Drain2 : Drain3 : Source4 : In5 : Drain6 : DrainMini6-G1 Package0.4±0.25°1
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MIP517
■Electrical Characteristics TC = 25°C ± 3°C
Parameter
Drain-source ON resistanceDrain-source voltageDrain clamp voltageDrain-source cutoff current 1Drain-source cutoff current 2Drain-source cutoff current 3Input voltage high-levelInput voltage low-levelInput current (normal)
Input current (act on protection) *Over current protection limitShort circuit load protection limitInput voltage of act on protection
SymbolRDS(on)VDS(on)VDS(CLP)IDS(off)1IDS(off)2IDS(off)3VIN(H)VIN(L)IIN(on)IIN(PROT)IOCPVDS(SHT)VIN(PROT)
Conditions
VIN = 5 V, IDS = 0.5 AVIN = 5 V, IDS = 0.5 AVIN = 0 V, IDS = 3 mAVIN = 0 V, VDS = 12 VVIN = 0 V, VDS = 25 VVIN = 0 V, VDS = 40 VIDS = 0.5 AIDS = 1 mA
VIN = 5 V, VDS = 0 VVIN = 5 VVIN = 5 VVIN = 5 V
0.71.04.0
0.20.751.11.65.0
4
0.80.51.10
45Min
Typ1.11.1520.010.020.08
5810
VVmAmAAVV
Max1.651.65
UnitΩVVµA
Note)1.At on-state when drain voltage exceeds the \"Short circuit load protection voltage\
2.When drain voltage exceeds the \"drain clamp voltage\" output MOS turn on, so drain voltage are clamped before thedrain-source junction become breakdown
3.*: State of short circuit laod protection and over heat protection (designed guarantee).
■Electrical Characteristics (Reference value: Non guarantee value)
Parameter
Cutoff temperature at overheatTurn-on timeTurn-off time
SymbolTSHDtONtOFF
VIN = 5 V
VDD = 30 V, RL = 60 ΩIDS = 0.5 A, VIN = 5 V
Conditions
Min
Typ14037
Max
Unit°Cµs
Note)If the chip temperature exceeds the \"over heat protection temperature\
down, the protection will operate automatically again.
2
SLB00073AED
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Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-tion equipment, life support systems and safety devices) in which exceptional quality and reliability arerequired, or if the failure or malfunction of the products may directly jeopardize life or harm the humanbody.
•Any applications other than the standard applications intended.(5)The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-tions satisfy your requirements.(6)When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will notbe liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence ofbreak down and failure mode, possible to occur to semiconductor products. Measures on the systems suchas redundant design, arresting the spread of fire or preventing glitch are recommended in order to preventphysical injury, fire, social damages, for example, by using the products.(7)When using products for which damp-proof packing is required, observe the conditions (including shelf life
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2003 SEP