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Si7860ADP
New Product
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0095 @ VGS = 10 V0.0125 @ VGS = 4.5 V
ID (A)
1616
DTrenchFETr Power MOSFET
DPWM Optimized for High Efficiency
DNew Low Thermal Resistance PowerPAKrPackage with Low 1.07-mm ProfileD100% Rg Tested
APPLICATIONS
DBuck Converter
-High Side or Low SideDSynchronous Rectifier
-Secondary Rectifier
PowerPAK SO-8
6.15 mmS123SS5.15 mmD
G4D8765DDDG
Bottom View
Ordering Information: Si7860ADP-T1-E3
SN-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source VoltageGate-Source Voltage
Continuous Drain Current (TJ = 150_C)aPulsed Drain Current
Continuous Source Current (Diode Conduction)aMaximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_CTA = 70_CTA = 25_CTA = 70_C
Symbol
VDSVGSIDIDMISPDTJ, Tstg
10 secs
30\"20
1613
\"50
4.14.83.1
Steady StateUnit
V
118
A
1.51.81.1
-55 to 150
W_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum JunctiontoAmbient (MOSFET)aMaximum Junction-to-Ambient (MOSFET)Maximum Junction-to-Case (Drain)Notes
a.Surface Mounted on 1” x 1” FR4 Board.Document Number: 72651S-32674—Rev. A, 29-Dec-03
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t v 10 secSteady StateSteady State
RthJARthJC
SymbolTypical
21561.9
Maximum
26702.5
Unit
_C/W
1
元器件交易网www.cecb2b.com
Si7860ADP
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold VoltageGate-Body Leakage
Zero Gate Voltage Drain CurrentOn-State Drain Currenta
Drain-Source On-State ResistanceaForward TransconductanceaDiode Forward Voltagea
VGS(th)IGSSIDSSID(on)rDS(on)gfsVSD
VDS = VGS, ID = 250 mAVDS = 0 V, VGS = \"20 VVDS = 30 V, VGS = 0 VVDS = 30 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 10 VVGS = 10 V, ID = 16 AVGS = 4.5 V, ID = 14 AVDS = 15 V, ID = 16 AIS = 3 A, VGS = 0 V
40
0.00790.0105600.70
1.10.00950.0125
1.0
3.0\"10015
VnAmAAWSV
SymbolTest ConditionMinTypMaxUnit
Dynamicb
Total Gate ChargeGate-Source ChargeGate-Drain ChargeGate-ResistanceTurn-On Delay TimeRise Time
Turn-Off Delay TimeFall Time
Source-Drain Reverse Recovery Time
QgQgsQgdRgtd(on)trtd(off)tftrr
IF = 3 A, di/dt = 100 A/msVDD = 15 V, RL = 15 W
ID^ 1 A, VGEN = 10 V, RG = 6 W
0.5
VDS = 15 V, VGS = 4.5 V, ID = 16 A
1354.01.71812461940
3.22718703070
nsW
18
nC
Notes
a.Pulse test; pulse width v300 ms, duty cycle v2%.b.Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics50
VGS = 10 thru 4 V40
ID- Drain Current (A)ID- Drain Current (A)4050
Transfer Characteristics3030
20
3 V10
20
TC = 125_C10
25_C-55_C2.5
3.0
3.5
4.0
00
1
2
3
4
500.0
0.51.01.52.0
VDS - Drain-to-Source Voltage (V)
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VGS - Gate-to-Source Voltage (V)
Document Number: 72651S-32674—Rev. A, 29-Dec-03
2
元器件交易网www.cecb2b.com
Si7860ADP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.015
2500
Vishay Siliconix
Capacitance
rDS(on)- On-Resistance (W)0.012
VGS = 4.5 VVGS = 10 VC - Capacitance (pF)2000
Ciss0.0091500
0.0061000
Coss500
Crss0.003
0.000
0
10
20
30
40
50
00
6
12
18
24
30
ID - Drain Current (A)VDS - Drain-to-Source Voltage (V)
6
VGS- Gate-to-Source Voltage (V)VDS = 15 VID = 16 AGate Charge
2.00
On-Resistance vs. Junction Temperature
VGS = 10 VID = 16 A4
rDS(on)- On-Resistance (W)(Normalized)8
12
16
20
51.75
1.50
31.25
21.00
10.75
00
40.50
-50
-250255075100125150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (_C)Source-Drain Diode Forward Voltage
60
0.040
On-Resistance vs. Gate-to-Source VoltageTJ = 150_C10
rDS(on)- On-Resistance (W)0.032
IS- Source Current (A)0.024
TJ = 25_C0.016
ID = 16 A0.008
10.00
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)VGS - Gate-to-Source Voltage (V)
Document Number: 72651S-32674—Rev. A, 29-Dec-03
www.vishay.com
3
元器件交易网www.cecb2b.comSi7860ADPVishay SiliconixNew ProductTYPICAL CHARACTERISTICS (25_C UNLESS NOTED)Threshold Voltage0.6ID = 250 mA0.3VGS(th)Variance (V)160200Single Pulse Power, Juncion-To-AmbientPower (W)0.0120-0.380-0.0-0.9-50
0-25
0
25
50
75
100
125
150
0.001
0.01
0.1Time (sec)
1
10
TJ - Temperature (_C)
100
Safe Operating Area, Junction-to-Case
10
ID- Drain Current (A)Limited byrDS(on)1 ms10 ms1
100 ms1 s0.1
10 sTC = 25_CSingle Pulsedc0.010.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
21Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.50.20.10.10.050.02Single Pulse0.0110-410-310-210-11Square Wave Pulse Duration (sec)Notes:PDMt1t21. Duty Cycle, D =t1t22. Per Unit Base = RthJA = 125_C/W3. TJM - TA = PDMZthJA(t)4. Surface Mounted10100600www.vishay.com4Document Number: 72651S-32674—Rev. A, 29-Dec-03元器件交易网www.cecb2b.com
Si7860ADP
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
21
Normalized Effective TransientThermal ImpedanceDuty Cycle = 0.5Vishay Siliconix
0.20.10.1
0.050.02Single Pulse0.01
10-4
10-3
10-2
Square Wave Pulse Duration (sec)
10-1
1
Document Number: 72651S-32674—Rev. A, 29-Dec-03
www.vishay.com
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