专利内容由知识产权出版社提供
专利名称：Power semiconductor device used for power
control
发明人：Wataru Saito,Ichiro Omura,Hiromichi Ohashi申请号：US10986103申请日：20041112
公开号：US20050087765A1公开日：20050428
专利附图：
摘要：A power semiconductor device includes a first semiconductor layer, a secondsemiconductor layer of a first conductivity type, first and second main electrodes, acontrol electrode and a third semi-conductor layer. The second semiconductor layer is
formed on the first semiconductor layer. The first and second main electrodes areformed on the second semiconductor layer separately from each other. The controlelectrode is formed on the second semiconductor layer between the first and secondmain electrodes. The third semiconductor layer is formed on the second semiconductorlayer between the control electrode and the second main electrode.
申请人：Wataru Saito,Ichiro Omura,Hiromichi Ohashi
地址：Kawasaki-shi JP,Yokohama-shi JP,Yokohama-shi JP
国籍：JP,JP,JP
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