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专利名称：Self ionized plasma for sputtering copper发明人：Chiang, Tony P.,Cong, Yu D.,Ding, Peijun,Fu,
Jianming,Tang, Howard H.,Tolia, Anish
申请号：EP00308846.5申请日：20001006公开号：EP1091016A3公开日：20010613
专利附图：
摘要：The disclosure relates to a DC magnetron sputter reactor (50) for sputteringcopper, its method of use, and shields and other parts promoting self-ionized plasma(SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr.
Also, a method of coating copper into a narrow and deep via or trench using SIP for a firstcopper layer is disclosed. SIP is promoted by a small magnetron (130) having poles (132,134) of unequal magnetic strength and a high power applied to the target duringsputtering. The target power for a 200mm wafer is preferably at least 10kW; morepreferably, at least 18kW; and most preferably, at least 24kW. Hole filling with SIP isimproved by long-throw sputtering in which the target-to-substrate spacing (56 to 58) isat least 50% of substrate diameter, more preferably at least 80%, most preferably atleast 140%. The SIP copper layer (150) can act as a seed and nucleation layer for holefilling with conventional sputtering (PVD) or with electrochemical plating (ECP). For veryhigh aspect-ratio holes (22), a copper seed layer is deposited by chemical vapordeposition (CVD) over the SIP copper nucleation layer, and PVD or ECP completes thehole filling. The copper seed layer may be deposited by a combination of SIP and high-density plasma sputtering. For very narrow holes, the CVD copper layer may fill the hole.Preferably, the plasma is ignited in a cool process in which low power is applied to thetarget in the presence of a higher pressure of argon working gas. After ignition, thepressure is reduced, and target power is ramped up to a relatively high operational levelto sputter deposit the film.
申请人：Applied Materials, Inc.
地址：3050 Bowers Avenue Santa Clara, California 95054 US
国籍：US
代理机构：Bayliss, Geoffrey Cyril
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