元器件交易网www.cecb2b.com
FLM1011-6F
X,Ku-Band Internally Matched FET
FEATURES
• High Output Power:P1dB= 37.5dBm (Typ.)• High Gain:G1dB= 7.5dB (Typ.)• High PAE:ηadd= 28% (Typ.)• Low IM3= -45dBc@Po = 25dBm• Broad Band:10.7 ~ 11.7GHz
• Impedance Matched Zin/Zout = 50Ω• Hermetically Sealed
DESCRIPTION
The FLM1011-6F is a power GaAs FET that is internally matched forstandard communication bands to provide optimum power and gain in a50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)ItemDrain-Source VoltageGate-Source VoltageTotal Power DissipationStorage TemperatureChannel TemperatureSymbolVDSVGSPTTstgTchTc = 25°CConditionRating15-531.2-65 to +175175UnitVVW°C°CFujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively withgate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)ItemSaturated Drain CurrentTransconductancePinch-off VoltageGate Source Breakdown VoltageOutput Power at 1dB G.C.P.Power Gain at 1dB G.C.P.Drain CurrentPower-Added EfficiencyGain Flatness3rd Order IntermodulationDistortionThermal ResistanceCASE STYLE: IASymbolIDSSgmVpVGSOP1dBG1dBIdsrηadd∆GIM3Rthf = 11.7GHz, ∆f = 10MHz2-Tone TestPout = 25dBm S.C.L.Channel to CaseVDS = 10V,IDS = 0.6 IDSS(Typ.),f = 10.7 ~ 11.7 GHz,ZS = ZL = 50ΩTest ConditionsVDS = 5V, VGS = 0VVDS = 5V, IDS = 1800mAVDS = 5V, IDS = 120mAIGS = -120µAMin.---0.5-536.56.5----42-LimitTyp.Max.28002350-1.5-37.57.5180028--454.04200--3.0---2100-±0.6-4.5UnitmAmSVVdBmdBmA%dBdBc°C/WG.C.P.: Gain Compression Point,S.C.L.: Single Carrier Level
Edition 1.4 August 2004
1
元器件交易网www.cecb2b.com
FLM1011-6F
X,Ku-Band Internally Matched FET
POWER DERATING CURVE
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10Vf1 = 11.7 GHz32
f2 = 11.71 GHz2-tone test30
28262422
151719212325IM3
Total Power Dissipation (W)40
Output Power (S.C.L.) (dBc)Pout
30
-20-30-40-50
20
10
050100150200
Case Temperature (°C)
Input Power (S.C.L.) (dBm)S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
VDS=10V P1dB
OUTPUT POWER vs. INPUT POWER
38Output Power (dBm)Pin=32dBm37
363432302826Output Power (dBm)3533312927
10.811.011.211.4P1dB28dBm26dBm24dBm22dBm20dBm
VDS=10Vf = 11.2 GHz Pout
4030ηadd
201011.620222426283032Frequency (GHz)
Input Power (dBm)
2
ηadd (%)IM3 (dBc)元器件交易网www.cecb2b.com
FLM1011-6F
X,Ku-Band Internally Matched FET
+j50+j100+j2510.910.711.111.111.350Ω11.711.711.9 11.9 11.311.511.525011.311.511.110.910.710.710.710.5 GHz1211.7S11S22+90°S21S12
+j1010.5 GHz +j25011.110.910.911.9 11.311.511.711.9 3450
1010.5 GHz180°10.5 GHzSCALE FOR |S21|SCALE FOR |S12|0°
-j10-j2500.1-j25-j50-j1000.2-90°S-PARAMETERS
VDS= 10V, IDS= 1800mA
FREQUENCY(MHZ)
105001060010700108001090011000111001120011300114001150011600117001180011900
S11MAG
.655.639.621.601.580.555.523.488.443.397.350.311.282.259.252
S21
ANG
149.3139.8130.3120.5109.798.485.972.658.842.827.29.3-9.1-30.2-51.0
S12
ANG
175.1167.0157.7146.9137.6128.8121.5114.7107.199.390.682.070.958.749.1
S22
ANG
160.5151.3135.2127.2113.5104.693.983.374.162.753.041.735.425.618.6
MAG
2.6542.7662.62.92.8552.7602.6852.6832.6932.7362.7402.7852.7802.6632.469
MAG
.037.039.049.050.060.066.078.086.091.097.099.103.103.108.107
MAG
.230.245.2.270.293.284.290.281.282.286.302.315.348.372.396
ANG
168.6151.6136.9123.0111.396.483.867.249.629.711.4-5.8-22.4-36.8-48.2
3
元器件交易网www.cecb2b.com
FLM1011-6F
X,Ku-Band Internally Matched FET
Case Style \"IA\"Metal-Ceramic Hermetic Package1.5 Min.(0.059)12-R 1.25±0.15(0.049)0.1(0.004)4230.5(0.020)1.5 Min.(0.059)1.8±0.15(0.071)3.2 Max.(0.126)8.1(0.319)0.2 Max.(0.008)1.15(0.045)9.7±0.15(0.382)13.0±0.15(0.512)16.5±0.15(0.650)1. Gate2. Source (Flange)3. Drain4. Source (Flange)Unit: mm(inches)For further information please contact:
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Eudyna Devices USA Inc.2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.TEL:(408) 232-9500FAX:(408) 428-9111
www.us.eudyna.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.Network HouseNorreys Drive
Maidenhead, Berkshire SL6 4FJUnited Kingdom
TEL:+44 (0) 1628 504800FAX:+44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.Hong Kong BranchRm.1101, Ocean Centre, 5 Canton Rd.Tsim Sha Tsui, Kowloon, Hong KongTEL:+852-2377-0227FAX:+852-2377-3921
Eudyna Devices Inc.reserves the right to change products and specificationswithout notice.The information does not convey any license under rights ofEudyna Devices Inc.or others.
©2004 Eudyna Devices USA Inc.Printed in U.S.A.
Eudyna Devices Inc.Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, JapanTEL:+81-45-853-8156FAX:+81-45-853-8170
4
