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专利名称：Programmable resistive memory with diode
structure
发明人：Hsiang-Lan Lung,Chung Hon Lam,Matthew J.
Breitwisch
申请号：US11871813申请日：20071012公开号：US07551473B2公开日：20090623
专利附图：
摘要：Programmable resistive memory cells are accessed by semiconductor diodestructures. Manufacturing methods and integrated circuits for programmable resistive
elements with such diode structures are also disclosed.
申请人：Hsiang-Lan Lung,Chung Hon Lam,Matthew J. Breitwisch
地址：Elmsford NY US,Peekskill NY US,Yorktown Heights NY US
国籍：US,US,US
代理机构：Haynes Beffel & Wolfeld LLP
代理人：Kenta Suzue
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