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专利名称：Nitride semiconductor device and its
manufacturing method
发明人：Ishida, Masahiro,Nakamura, Shinji,Orita,
Kenji,Imafuji, Osamu,Yuri, Masaaki
申请号：EP99117485.5申请日：19990910公开号：EP0993048B1公开日：20021106
摘要：A semiconductor device includes: a crystalline substrate including a primarysurface and a crystal plane provided within the primary surface so as to have a surfaceorientation different from a surface orientation of the primary surface; a semiconductorlayered structure grown over the crystalline substrate; and an active region provided at aportion in the semiconductor layer structure above the crystal plane.
申请人：MATSUSHITA ELECTRIC IND CO LTD
地址：JP
国籍：JP
代理机构：Marx, Lothar, Dr.
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