专利内容由知识产权出版社提供
专利名称：Nitride semiconductor structure and
semiconductor light emitting deviceincluding the same
发明人：Yen-Lin Lai,Shen-Jie Wang申请号：US14732798申请日：20150608公开号：US090712B2公开日：20170502
专利附图：
摘要：A nitride semiconductor structure and a semiconductor light emitting deviceincluding the same are revealed. The nitride semiconductor structure includes a multiple
quantum well structure formed by a plurality of well layers and barrier layers stackedalternately. One well layer is disposed between every two barrier layers. The barrierlayer is made of AlInGaN (0
申请人：Genesis Photonics Inc.
地址：Tainan TW
国籍：TW
代理机构：Jianq Chyun IP Office
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