Philips Semiconductors RF Communications ProductsProduct specificationVideo amplifierNE592DESCRIPTIONPIN CONFIGURATIONSThe NE592 is a monolithic, two-stage, differential output, widebandD, N Packagesvideo amplifier. It offers fixed gains of 100 and 400 without externalcomponents and adjustable gains from 400 to 0 with one externalINPUT 2114INPUT 1resistor. The input stage has been designed so that with the additionof a few external reactive elements between the gain selectNC213NCterminals, the circuit can function as a high-pass, low-pass, orG12Gband-pass filter. This feature makes the circuit ideal for use as a2B GAIN SELECT32A GAIN SELECTvideo or pulse amplifier in communications, magnetic memories,G1B GAIN SELECT411G1A GAIN SELECTdisplay, video recorder systems, and floppy disk head amplifiers.10Now available in an 8-pin version with fixed gain of 400 withoutV-5V+external components and adjustable gain from 400 to 0 with oneNC69NCexternal resistor.OUTPUT 278OUTPUT 1TOP VIEWFEATURES•120MHz unity gain bandwidth•D, N PackagesAdjustable gains from 0 to 400•INPUT 218INPUT 1Adjustable pass bandG•1B GAIN SELECT27G1A GAIN SELECTNo frequency compensation requiredV-36V+•Wave shaping with minimal external componentsOUTPUT 245OUTPUT 1•MIL-STD processing availableTOP VIEWAPPLICATIONS•Floppy disk head amplifier•Video amplifier•Pulse amplifier in communications•Magnetic memory•Video recorder systemsBLOCK DIAGRAM+VR1R2R8R10R9Q6Q5Q4Q3R11OUTPUT 1INPUT 2INPUT 1Q1Q2G1AG1BR12OUTPUT 2R3R5G2AG2BQ7BQ8Q9Q10Q7AQ11R7AR7BR15R16R13R14-VApril 15, 1992250853-0911 056Philips Semiconductors RF Communications ProductsProduct specificationVideo amplifierNE592ORDERING INFORMATIONDESCRIPTIONTEMPERATURE RANGEORDER CODEDWG #14-Pin Plastic Dual In-Line Package (DIP)0 to +70°CNE592N140405B14-Pin Small Outline (SO) package0 to +70°CNE592D140175D8-Pin Plastic Dual In-Line Package (DIP)0 to +70°CNE592N80404B8-Pin Small Outline (SO) package0 to +70°CNE592D80174CNOTES:N8, N14, D8 and D14 package parts also available in “High” gain version by adding “H” before package designation, i.e., NE592HDBABSOLUTE MAXIMUM RATINGSTA=+25°C, unless otherwise specified.SYMBOLPARAMETERRATINGUNITVCCSupply voltage±8VVINDifferential input voltage±5VVCMCommon-mode input voltage±6VIOUTOutput current10mATAOperating ambient temperature range0 to +70°CTSTGStorage temperature range-65 to +150°CPD MAXMaximum power dissipation,TA=25°C (still air)1D-14 package0.98WD-8 package0.79WN-14 package1.44WN-8 package1.17WNOTES:1.Derate above 25°C at the following rates:D-14 package at 7.8mW/°CD-8 package at 6.3mW/°CN-14 package at 11.5mW/°CN-8 package at 9.3mW/°CApril 15, 1992251Philips Semiconductors RF Communications ProductsProduct specificationVideo amplifierNE592DC ELECTRICAL CHARACTERISTICSTA=+25°C VSS=±6V, VCM=0, unless otherwise specified. Recommended operating supply voltages VS=±6.0V. All specifications apply to bothstandard and high gain parts unless noted differently.SYMBOLPARAMETERTEST CONDITIONSNE592MinTypMaxUNITAVOLDifferential voltage gain,standard partGain 11RL=2kΩ, VOUT=3VP-P250400600V/VGain 22, 480100120V/VRINInput resistanceGain 114.0kΩGain 22, 41030kΩCINInput capacitance2Gain 242.0pFIOSInput offset current0.45.0µAIBIASInput bias current9.030µAVNOISEInput noise voltageBW 1kHz to 10MHz12µVRMSVINInput voltage range±1.0VCMRRCommon-mode rejection ratioGain 24VCM±1V, f<100kHz6086dBGain 24VCM±1V, f=5MHz60dBPSRRSupply voltage rejection ratioGain 24∆VS=±0.5V5070dBVOSOutput offset voltageGain 1RL=∞1.5VGain 24RL=∞1.5VGain 33RL=∞0.350.75VVCMOutput common-mode voltageRL=∞2.42.93.4VVOUTOutput voltage swingRL=2kΩ3.04.0VdifferentialROUTOutput resistance20ΩICCPower supply currentRL=∞1824mANOTES:1.Gain select Pins GGain select Pins G1A and G1B connected together.2.2A and G2B connected together.3.All gain select pins open.4.Applies to 14-pin version only.April 15, 1992252Philips Semiconductors RF Communications ProductsProduct specificationVideo amplifierNE592DC ELECTRICAL CHARACTERISTICSDC Electrical CharacteristicsVSS=±6V, VCM=0, 0°C ≤TA≤70°C, unless otherwise specified. Recommended operating supply voltages VS=±6.0V.All specifications apply to both standard and high gain parts unless noted differently.SYMBOLPARAMETERTEST CONDITIONSNE592MinTypMaxUNITAVOLDifferential voltage gain,standard partGain 11RL=2kΩ, VOUT=3VP-P250600V/VGain 22, 480120V/VRINInput resistanceGain 22, 48.0kΩIOSInput offset current6.0µAIBIASInput bias current40µAVINInput voltage range±1.0VCMRRCommon-mode rejection ratioGain 24VCM±1V, f<100kHz50dBPSRRSupply voltage rejection ratioGain 24∆VS=±0.5V50dBOutput offset voltageVGain 1OSGain 24RL=∞1.51.5VGain 331.0VOUTOutput voltage swing differentialRL=2kΩ2.8VICCPower supply currentRL=∞27mANOTES:1.Gain select Pins G2.Gain select Pins G1A and G1B connected together.3.All gain select pins open.2A and G2B connected together.4.Applies to 14-pin versions only.AC ELECTRICAL CHARACTERISTICSTA=+25°C VSS=±6V, VCM=0, unless otherwise specified. Recommended operating supply voltages VS=±6.0V. All specifications apply to bothstandard and high gain parts unless noted differently.SYMBOLPARAMETERTEST CONDITIONSNE/SA592UNITMinTypMaxBandwidthBWGain 1140MHzGain 22, 490MHzRise timetRGain 11VOUT=1VP-P10.512nsGain 22, 44.5nsPropagation delaytPDGain 11VP-P7.510nsGain 22, 4OUT=1V6.0nsNOTES:1.Gain select Pins G2.Gain select Pins G1A and G1B connected together.3.All gain select pins open.2A and G2B connected together.4.Applies to 14-pin versions only.April 15, 1992253Philips Semiconductors RF Communications ProductsProduct specificationVideo amplifierNE592TYPICAL PERFORMANCE CHARACTERISTICSCommon-Mode Rejection RatioOutput Voltage Swing asas a Function of Frequencya Function of FrequencyPulse ResponseBd1007.01.6 – OVS = +6VI90GAIN 2TVpVTAS = +6VpV6.0S = +6V1.480A = 25oCT TRA = 25oC–A = 25oC V1.2R L = 1kNGR–O70N5.0L = 1kΩ IE1.0ITGC60W0.8ES 4.0JLTA50EEGOGAIN 2RV0.6 E40LTA3.0TDU0.4GAIN 1OO30VPM T0.2-2.0TUN20UOOP0MT10UMO1.0-0.2OC00-0.410k100k1M10M100M1510501005001000-15-10-505101520253035FREQUENCY – HzFREQUENCY – MHzTIME – nsSupply Current as aPulse Response as aPulse Response as aFunction of TemperatureFunction of Supply VoltageFunction of Temperature281.61.6TA = 25oC1.4GAIN 2GAIN 2TA = 25oC1.4A1.2VVm24VRL = 1kΩS = +8VS = +6VV1.2RL = 1kΩ ––– 1.0TENGV S = +6VE1.0E20A0.8GR0.8Tamb = 0oCRLTVUO0.6S = +3VLTAOTCV V0.6A = 25oC 16TTLYU0.4U0.4PPToCPTUU0.2PT0.2A = 70S12OU0O0-0.2-0.28-0.4-0.4345678-15-10-505101520253035-15-10-505101520253035SUPPLY VOLTAGE – +VTIME – nsTIME – nsVoltage Gain as aGain vs. Frequency as aVoltage Gain as aFunction of TemperatureFunction of TemperatureFunction of Supply Voltage1.10B601.41.08VS = +6VdGAIN 2 –Tamb = 25oC NN50VS = +6V1.3IINA1.06ARIGGL = 1kΩA1.2 EGE1.0440 GGE1.1A1.02GTA1.0GAIN 2LTL30OOLTAV1.00VT E0.98GAIN 2D20A = –55oCOV0.9 VEEIDV0.8ATNTA = 25oCI0.96LE10ATE L0.7GAIN 1R0.94GAIN 1ELTGA = 125oCE0.60.92N0RIS0.50.90-1001020304050607015105010050010000.4345678TEMPERATURE – oCFREQUENCY – MHzSUPPLY VOLTAGE – +VApril 15, 1992254Philips Semiconductors RF Communications ProductsProduct specificationVideo amplifierNE592TYPICAL PERFORMANCE CHARACTERISTICS (Continued)Gain vs. Frequency as aVoltage GainVoltage Gain as a Function of Supply VoltageAdjust CircuitFunction of RADJ (Figure 3)B601000d GAIN 20.2µFV/ V–S = +6V N50TV f = 100kHzIA = 25oC – A100 TGRL = 1kΩ1412118NIAA = 25oC E40592 FIGURE 3G170.2µFG ETA34GLA10O30LTV ODVE20VS = +8V LDA1NE5151RIADJ1k1kT NE10VS = +6VELGRE.1NFI0SVS = +3VFIVS = +6VTA = 25oCD-10.0115105010050010001101001K10K100K1MFREQUENCY – MHzRADJ – ΩOutput Voltage and CurrentSupply Current as aDifferential OverdriveSwing as a Function ofFunction of TemperatureRecovery TimeSupply Voltage21707.0sVS = +6VnV20 S = +6VR–60OAT AETA = 25oCA = 25oC Vm6.0 mMGAIN 2 –– I–TGT 19 50TNN5.0NYRIEEWRR18EV40SRVOLTAGE REU4.0UOCGC CEK 17R30NLY LTAI3.0CURRENTPEOS PVIVT U16R20TUP2.0SDURPTU15EV10TUO1.0OO140-60-20206010014000204060801001201401601802003.04.05.06.07.08.0TEMPERATURE – oCDIFFERENTIAL INPUT VOLTAGE – mVSUPPLY VOLTAGE – +VOutput Voltage Swing as aFunction of Load ResistanceInput Resistance as aInput Noise VoltageFunction of Temperatureas a Function ofSource Resistance7.070100ppVS = +6VGAIN 2GAIN 2V6.0 TV–A = 25oCΩ60S = +6Vsm90VKVrS = +6V G– 80T N5.0E50–µ IWCE70BW = 10MHzA = 25oCSNG AA60E4.0T40GSLTISOLTA3.0EV50 OR30E 40VTSI UOTU2.0P30PN20N TITU20UO1.010PNI1000010501005001K5K10K-60-20020601001401101001K10KLOAD RESISTANCE – ΩTEMPERATURE – oCSOURCE RESISTANCE – ΩApril 15, 1992255Philips Semiconductors RF Communications ProductsProduct specificationVideo amplifierNE592Phase Shift as aPhase Shift as aFunction of FrequencyFunction of Frequency00GAIN 2VVS = +6V-50S = +6VSTSTA = 25oCEA = 25oCE-5EERR-100GGEED-10D -150–GAIN 2– TTFFIIHH-200S-15GAIN 1S EESS-250AAHHP-20P-300-25-35001234567101101001000FREQUENCY – MHzFREQUENCY – MHzVoltage Gain as aVoltage Gain as aFunction of FrequencyFunction of Frequency60V50GAIN 1S = +6VTVamb = 25oC40S = +6VRTA = 25oCBL = 1KΩ30BGAIN 3dGAIN 2d 40 ––20 NNIA30IA10GG EGA20E0GA-10LTLTOV10O-20V0-30-40-501101001000.01.11101001000FREQUENCY – MHzFREQUENCY – MHzTEST CIRCUITS TA = 25°C, unless otherwise specified.VIN592RLVOUT51Ω51Ω0.2µFein5920.2µFeouteout51Ω51Ω1k1kApril 15, 1992256Philips Semiconductors RF Communications ProductsProduct specificationVideo amplifierNE592TYPICAL APPLICATIONS+62re141110VNOTE:1592V10V0(s)57v1(s)[1.4@104Z(S))2re4Z[1.4@104Z(S))32-6Basic Configuration+60.2µF+5+61411101094882KΩ15297V1592V01411Q11070.2µF8592451C45725Q2KΩAMPLITUDE:1-10 mV p-p3-6FREQUENCY:1-4 MHz6NOTE:-6For frequency F1 << 1/2 π (32) CV]1.4x104CdViREAD HEADDIFFERENTIATOR/AMPLIFIERZERO CROSSING DETECTOROdTDifferentiation with HighDisc/Tape Phase-Modulated Readback SystemsCommon-Mode Noise RejectionFILTER NETWORKSZ NETWORKFILTERVTYPE0 (s) TRANSFERV1 (s) FUNCTIONRL1.4 104LOW PASSLƪ1s)RńLƫRC1.4 104sHIGH PASSRƪs)1ńRCƫRLCBAND PASS1.4 104sLƪs2)RńLs)1ńLCƫLR1.4 104ƪs2)1ńLCBAND REJECTRCs2)1ńLC)sńRCƫNOTES: In the networks above, the R value used is assumed to include 2rS = jωe, or approximately 32Ω.ω = 2πfApril 15, 1992257
