元器件交易网www.cecb2b.com TC215 1024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991•••••••••••• High-Resolution, Solid-StateFrame-Transfer Image Sensor17.2-mm Image-Area Diagonal1000 (H) x 1018 (V) Active Elements inImage-Sensing AreaSquare PixelsLow Dark CurrentElectron-Hole Recombination AntibloomingDynamic Range . . . More Than 60 dBHigh SensitivityHigh Photoresponse UniformityHigh Blue ResponseSingle-Phase ClockingSolid-State Reliability With No ImageBurn-in, Residual Imaging, ImageDistortion, Image Lag, or MicrophonicsDUAL-IN-LINE PACKAGE(TOP VIEW)OUT1AMP GNDOUT2ADBSUBRST2RST1CDBSRG1SRG2TRGIDB1234567101112242322212019181716151413ABG2IAG2ABG1IAG1SUBTDBSUBSUBIAG1ABG1IAG2ABG2descriptionThe TC215 is a full-frame charge-coupled-device (CCD) image sensor that provides very high-resolution imageacquisition for image-processing applications such as robotic vision, medical X-ray analysis, and metrology. Theimage format measures 12 mm horizontally by 12.216 mm vertically; the image-area diagonal is 17.2 mm. Theimage-area pixels are 12-µm square. The image area contains 1018 active lines with 1000 active pixels per line.Six additional dark reference lines give a total of 1024 lines in the image area, and 24 additional dark referencepixels per line give a total of 1024 pixels per horizontal line.The full-frame image sensor should be used with a shutter or with strobed illumination to prevent smearing ofthe image during readout. To prepare the imaging area for image capture, the photoelectric charge that hasaccumulated in the image pixels can be transferred into the clearing drain in one millisecond. After imagecapture (integration time), the readout is accomplished by transferring the charge, one line at a time, into twoserial registers, each of which contains 512 data elements and 12 dummy elements. The typical serial-registerclocking rate is 10 megapixels per second. Operating the TC215 at the typical data rate of one field per framegenerates video output at a continuous 15 frames per second.Gated floating-diffusion detection structures are used with each serial register to convert charge to signalvoltage. External reset allows the application of off-chip correlated clamp sample-and-hold amplifiers forlow-noise performance. To provide high output-drive capability, both outputs are buffered by low-noise,two-stage, source-follower amplifiers. These two output signals can provide a data rate of 20 megapixels persecond when combined off chip. At room temperature, the readout noise is 55 electrons and a minimum dynamicrange of 60 dB is available.This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted togetheror the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under nocircumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to preventdamage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current isallowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for HandlingElectrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.Copyright © 1991, Texas Instruments IncorporatedPOST OFFICE BOX 655303 DALLAS, TEXAS 75265•2-1元器件交易网www.cecb2b.comTC2151024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991description (continued)The blooming protection incorporated into the sensor is based on recombining excess charge with charge ofoppositie polarity in the substrate. This antiblooming is activated by supplying clocking pulses to theantiblooming gate, which is an integral part of each image-sensing element.The TC215 is built using TI-proprietary virtual-phase technology, which provides devices with high blueresponse, low dark signal, good uniformity, and single-phase clocking. The TC215 is characterized for operationfrom –10°C to 40°C.functional block diagramTop DrainTDBIAG1ABG1IAG2ABG2ADBRST21916151413Amplifiers4624 Dark ReferenceElements2324IAG2ABG221IAG1Image Area WithBlooming Protection22ABG1OUT2RST1OUT1371Multiplexer, Transfer Gates,and Serial RegistersIDB12109SRG2SRG111TRG 12 DummyElements2AMP GND8CDBClearing Drain2-2POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC215 1024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991sensor topology diagram1000 Pixels1 Pixel22 Pixels1 Pixel1018 Lines6 LinesOPB1212Dummy Pixels511511Terminal FunctionsTERMINALNAMEABG1†ABG1†ABG2†ABG2†ADBAMP GNDCDBIAG1†IAG1†IAG2†IAG2†IDBOUT1OUT2RST1RST2SRG1SRG2SUB†SUB†SUB†SUB†TDBTRGNO.152213244281621142312137691051718201911IIIIIIIIOOIIIII/OIIIIIDESCRIPTIONAntiblooming gate for upper image areaAntiblooming gate for upper image areaAntiblooming gate for lower image areaAntiblooming gate for lower image areaSupply voltage for amplifier drain biasAmplifier groundSupply voltage for clearing drain biasUpper image-area gateUpper image-area gateLower image-area gateLower image-area gateSupply voltage for input diode biasOutput signal 1Output signal 2Reset gate 1Reset gate 2Serial-register gate 1Serial-register gate 2Substrate and clock returnSubstrate and clock returnSubstrate and clock returnSubstrate and clock returnSupply voltage for top drain biasTransfer gate†All terminals of the same name should be connected together externally (i.e.,pin15 to pin 22, pin 13 to pin 24, etc.).POST OFFICE BOX 655303 DALLAS, TEXAS 75265•2-3元器件交易网www.cecb2b.comTC2151024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991detailed descriptionThe TC215 consists of three basic functional blocks: (1) the image-sensing area, (2) the multiplexer block withserial registers and transfer gates, and (3) the low-noise signal-processing amplifier block with charge-detectionnodes. The location of each of these blocks is identified in the functional block diagram.image-sensing areaFigures 1 and 2 show cross sections with potential well diagrams and top views of image-sensing elements. Aslight enters the silicon in the image-sensing area, free electrons are generated and collected in the potentialwells of the sensing elements. During this time, blooming protection is activated by applying a burst of pulsesto the antiblooming gate inputs every horizontal blanking interval. This prevents blooming caused by the spillingof charge from overexposed elements into neighboring elements. After integration is complete, the signalcharge is transferred in the dark to the two serial registers, where it is read out line by line.There are 24 full columns of elements at the left edge of the image-sensing area that are shielded from incidentlight; these elements provide the dark reference used in subsequent video-processing circuits to restore thevideo black level. There are also six dark lines at the bottom of the sensor.multiplexer with transfer gates and serial registersThe multiplexer and transfer gates transfer charge line by line from the image-sensing columns into thecorresponding serial registers and prepare it for readout. Figure 3 illustrates the layout of the multiplexing gatethat vertically separates the pixels for input into the serial registers. Figure 4 shows the layout of the interfaceregion between the serial-register gates and the transfer gates. Multiplexing is activated during the horizontalblanking interval by applying appropriate pulses to the transfer gates and serial registers; the required pulsetiming is shown in Figure 5. A drain is also included to provide the capability to clear the image-sensing areaof unwanted charge. Such charge can accumulate in the imager during the start-up of operation or under specialcircumstances. The clearing timing is illustrated in Figure 6.serial-register readout and video processingAfter transfer into the serial registers, the pixels are normally read out 180° out of phase (see Figure 7). Eachserial register must be reset to the reference level before the next pixel is read out. The timing for the resets andtheir relationships to the serial-register pulses is shown in Figure 8. Figure 8 also shows the timing for the pixelclamp and sample and hold needed for an off-chip double-correlated sampling circuit. These two output signalscan provide a data rate of 20 million pixels per second when combined off chip. After the charge is placed onthe detection node, it is buffered and amplified by a low-noise, dual-stage source follower. Each serial registercontains 12 dummy elements that are used to span the distance between the serial register and the outputamplifier. A schematic is shown in Figure 9. The location of the dummy elements, which are considered to bepart of the amplifiers, is shown in the functional block diagram. Figure 10 gives the timing for a single frame ofvideo. Operating the TC215 at the typical data rate of one field per frame generates video output at a continuous15 frames per second.2-4POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC215 1024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 199112 µm(H)Clocked Barrierφ-IAGVirtual BarrierAntiblooming GateVirtual WellAntibloomingClocking Levelsφ-ABGLight12 µm(V)Clocked WellAccumulated ChargeFigure 1. Charge-Accumulation Processφ-IAGClocked PhaseVirtual PhaseChannel StopsFigure 2. Charge-Transfer ProcessChannel StopsChannel StopVirtual WellClocked WellClockedWellsSerial-RegisterGateMultiplexingGateTransferGateFigure 3. Multiplexing-Gate LayoutFigure 4. Interface-Region LayoutPOST OFFICE BOX 655303 DALLAS, TEXAS 75265•2-5元器件交易网www.cecb2b.comTC2151024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991CSYNCCBLNKTRGSRG1SRG2RST1RST2CL1CL2SH1SH2IAG1,2HighHighLowLowLowLowABG1,2CPOB1CPOB2Figure 5. Horizontal Timing2-6POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC215 1024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 19911 µsLine 1IAG1Line 2Line 1023Line 1024IAG2ABG1,2TRGSRG1SRG2RST1HighRST2HighFigure 6. Clearing TimingDummy1SRG22311121Black Reference211121Image231SRG123121212123NOTE A:A minimum of 524 clock pulses is required to transfer out all elements of a serial register. Overclocking is recommended.Figure 7. Start of Serial-Transfer TimingPOST OFFICE BOX 655303 DALLAS, TEXAS 75265•2-7元器件交易网www.cecb2b.comTC2151024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991CCDOUTBufferPixelClampSample-and-HoldAmplifierSRGSRG1RSTCLSHRST1OUT1CL1SH1SRG2RST2OUT2CL2SH2NOTE A:The video-processing (off-chip) pulses are defined as follows:CL1=Clamp pulse for video from OUT1CL2=Clamp pulse for video from OUT2SH1=Sample pulse for the sample-and-hold amplifier for video 1SH2=Sample pulse for the sample-and-hold amplifier for video 2CSYNC=Composite video-sync pulseCBLNK=Composite video-blanking pulseCPOB1=Dark-reference clamp pulse for video from OUT1CPOB2=Dark-reference clamp pulse for video from OUT2Figure 8. Video-Process Timing2-8POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC215 1024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991Reference GeneratorADBCCD RegisterClockedVirtualGateGateDetection NodeReset GateandOutput DiodeTwo-StageSource-FollowerAmplifierOUTnSRGnRSTnFigure 9. Buffer Amplifier and Charge-Detection NodeIntegration(shutter open)Readout1024 PulsesClearingIAG1,2TRG541 PulsesSRG1SRG2Start of Serial TransferABG1,2RST1RST2Horizonal TimingFigure 10. Clock Timing Requirements – Single-Frame ModePOST OFFICE BOX 655303 DALLAS, TEXAS 75265•2-9元器件交易网www.cecb2b.comTC2151024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991spurious nonuniformity specificationThe spurious nonuniformity specification of the TC215 CCD grades –30 and –40 is based on several sensorcharacteristics:•••Amplitude of the nonuniform line or pixelPolarity of the nonuniform pixel–Black–WhiteNonuniform line or pixel countThe CCD sensors are characterized in both an illuminated condition and a dark condition. In the dark condition,the nonuniformity is specified in terms of absolute amplitude as shown in Figure 11. In the illuminated condition,the nonuniformity is specified as a percentage of the total illumination as shown in Figure 12.The pixel nonuniformity specification for the TC215 is as follows (CCD video-output signal is 50 mV ±10 mV):NONUNIFORMITY TYPELineWhite spot (40°C)Whitespot(25°C)White spot (25Blackspot(%oftotalillumination)Black spot (% of total illumination)Total number of nonuniformitiesTC215-30Maximum amplitude = 1.4 mVNumber with amplitude greater than 1 mV is ≤ 5Maximum amplitude = 25 mVMaximum amplitude = 15 mVMaximum amplitude = 25%B+C<20Maximum amplitude = 20 mVMaximum amplitude = 30%Number with amplitude greater than 10 mV = BNumber with amplitude greater than 10% = CTC215-40mVAmplitude% of TotalIlluminationttFigure 11. Pixel Nonuniformity,Dark ConditionFigure 12. Pixel Nonuniformity,Illuminated Condition2-10POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC215 1024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†Supply voltage range for ADB, CDB, IDB, TDB (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 15 VInput voltage range for ABG1, ABG2, IAG1, IAG2, RST1, RST2, SRG1, SRG2, TRG . . . . . . –15 V to 15 VOperating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10°C to 40°CStorage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30°C to 85°CLead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.NOTE 1:All voltage values are with respect to the substrate terminal.recommended operating conditionsMINSupply voltage for ADB, CDB, IDB, TDBSubstrate bias voltageIAG1IAG2IAG1, IAG2SRG1SRG2SRG1, SRG2RST1RST2RST1, RST2High levelLow levelHigh levelLow levelHigh levelLow levelHigh levelABG1, ABG2Intermediate level§Low levelTRGTRG, SRG1, SRG2, RST1, RST2Clock frequency, fclockCapacitive loadIAG1, IAG2ABG1, ABG2OUT1, OUT2High levelLow level1.5–111.5–111.5–115–1.5–7.51.5–115.5–1.2–722211NOM12022.5–92.5–92.5–96–0.9–6.52.5–910118pFMHzVMAX13UNITVVInput voltage, VgI‡Operating free-air temperature, TA–1040°C‡The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltagelevels.§Adjustment is required for optimal performance.POST OFFICE BOX 655303 DALLAS, TEXAS 75265•2-11元器件交易网www.cecb2b.comTC2151024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991electrical characteristics over recommended operating ranges of supply voltage and free-airtemperaturePARAMETERDynamic range (see Note 2)Charge conversion factorCharge transfer efficiency (see Note 3)Signal response delay time, τ (see Note 4 and Figure 16)Gamma (see Note 5)Output resistanceNoisevoltageNoise voltageNoise equivalent signalADB (see Note 6)Rejection ratio at 10 MHzSupply currentIAG1, IAG2InputInut cacapacitanceacitance, CCiABG1, ABG2TRG150008000350pFFSRGn (see Note 7)ABGn (see Note 8)1/f noise (5 kHz)Random noise (f = 100 kHz)0.10.08602040309mAdB0.99990180.200.94220.991000ΩµV/√HzelectronsnsMIN606TYP†MAXUNITdBµV/eSRG1, SRG2200†All typical values are at TA = 25 °C.NOTES:2.Dynamic range is –20 times the logarithm of the mean noise signal divided by the saturation output signal.3.Charge transfer efficiency is one minus the charge loss per transfer in the output register (1046 transfers). The test is performedin the dark using an electrical input signal.4.Signal-response delay time is the time between the falling edge of the SRG clock pulse and the output signal valid state.5.Gamma (γ) is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (thisvalue represents points near saturation):gExposure(2)Outputsignal(2)+Exposure(1)Outputsignal(1)ǒǓǒǓ6.ADB rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on ADB.7.SRGn rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on SRGn.8.ABGn rejection ratio is –20 times the logarithm of the ac amplitude on OUTn divided by the ac amplitude on ABGn.2-12POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC215 1024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991optical characteristics, TA = 25°C, integration time = 33 ms (unless otherwise noted)PARAMETERSensitivity(seeNote9)Sensitivity (see Note 9)Saturation signal, Vsat (see Note 11)Maximum usable signal, VuseBlooming overload ratio (see Note 12)Image-area well capacityDark currentDarksignal(seeNote13)Dark signal (see Note 13)PixeluniformityPixel uniformityColumnuniformityColumn uniformityShadingVO = 1/2 VU (see Note 10)TA = 40=40°CTA = 21°CTC215-30TC215-40TC215-30TC215-40TC215-30TC215-40No IR filterWith IR filterMeasured at VU(see Note 10)32020010060 x 1030.0275515201.41.415%electronsnA/cm2mVmVmVMINTYP518MAXUNITmV/lxmVmVNOTES:9.Sensitivity is measured at an integration time of 33 ms with a source temperature of 2859 K. A CM-500 filter is used. Sensitivity ismeasured at any illumination level that gives an output voltage level less than VU.10.VU is the output voltage that represents the threshold of operation of antiblooming. VU ≈ 1/2 saturation signal.11.Saturation is the condition in which further increase in exposure does not lead to further increase in output signal.12.Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming overload ratiois the ratio of blooming exposure to saturation exposure.13.Dark-signal level is measured from the dark dummy pixels.timing requirementsMINIAG1, IAG2SRG1, SRG2trRise timeRST1, RST2TRGABG1, ABG2IAG1, IAG2SRG1, SRG2tfFall timeRST1, RST2TRGABG1, ABG220010102001002001010200100nsnsMAXUNITPOST OFFICE BOX 655303 DALLAS, TEXAS 75265•2-13元器件交易网www.cecb2b.comTC2151024-×1024-PIXEL CCD IMAGE SENSORPARAMETER MEASUREMENT INFORMATIONVOBlooming PointWith AntibloomingDisabledBlooming PointWith AntibloomingEnabledDependent onWell Capacity SOCS014B – AUGUST 19 – REVISED DECEMBER 1991Vsat (min)Vuse (max)Level DependentUpon AntibloomingGate High LevelVuse (typ)DRVnLux(light input)DR(dynamicrange)+camerawhiteclipvoltageVnVn = noise floor voltageVsat (min) = minimum saturation voltageVuse (max) = maximum usable voltageVuse (typ) = typical user voltage (camera white clip)NOTES:A.Vuse (typ) is defined as the voltage determined to equal the camera white clip. This voltage must be less than Vuse (max).B.A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering the Vuse(typ),the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera.Figure 13. Typical Vsat, Vuse Relationship2-14POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC215 1024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991PARAMETER MEASUREMENT INFORMATIONVIH min100%90%Intermediate Level10%VIL max0%trtfFigure 14. Typical Clock Waveform for ABG1, ABG2, IAG1, and IAG2VIH min100%90%10%VIL max0%trtfFigure 15. Typical Clock Waveform for RST1, RST2, SRG1, SRG2, and TRG1.5 V to 2.5 VSRG– 9 V– 9 V to –11 V0%OUT90%100%CCD DELAYSampleandHoldτ10 ns15 nsFigure 16. SRG and CCD OUT WaveformsPOST OFFICE BOX 655303 DALLAS, TEXAS 75265•2-15元器件交易网www.cecb2b.comTC2151024-×1024-PIXEL CCD IMAGE SENSORAPPLICATION INFORMATIONVSSOUTGNDVCCGNDVIAG1ABG1GT1CBLNKABG2CL2GT2CL1IAG2CSYNCRST2SH2RST1SH1SRG1TRGSRG2CLKUser-Defined TimerVCC123456710TMS3473BIALVLI/NIAINABINMIDSELSAINPDGNDVAGB+VSSVSSIASRABSRVCCABLVLIAOUTABOUTSAOUTVCCVABG–20191817161514131211V SOCS014B – AUGUST 19 – REVISED DECEMBER 1991Master OscillatorABLVLCBLNKCL2CL1CSYNCSH2SH1VCC2N3904VABG–100 Ω12 VOUT 21 kΩParallel DriverVABG+TMS3473B123456710IALVLI/NIAINABINMIDSELSAINPDGNDVAGB+VSSVSSIASRABSRVCCABLVLIAOUTABOUTSAOUTVCCVABG–201918171615141312112N390412 V100 ΩABLVLOUT 11 kΩVVCCTC215VABG–123456710111212 VOUT1AMP GNDOUT2ADBSUBRST2RST1CDBSRG1SRG2TRGIDBABG2IAG2ABG1IAG1SUBTDBSUBSUBIAG1ABG1IAG2ABG2242322212019181716151413Parallel DriverVABG+SN28846123456710SEL0OUTGNDPDSRG3INSRG2INSRG1INTRGINNCSEL1OUTVSSVSSSEL0NCVCCSRG3OUTSRG2OUTSRG1OUTTRGOUTVCCSEL12019181716151413121112 VVCCImage SensorSerial DriverSN28846123456710SEL0OUTGNDPDSRG3INSRG2INSRG1INTRGINNCSEL1OUTVSSVSSSEL0NCVCCSRG3OUTSRG2OUTSRG1OUTTRGOUTVCCSEL120191817161514131211VCCDC VOLTAGES12 VADB5 VVCC–10 VVSS2 VV–2.5 VABLVL4 VVABG+–6 VVABG–Serial DriverSUPPORT CIRCUITSDEVICESN28846DWTMS3473BDWPACKAGE20 pin small outline20 pin small outlineAPPLICATIONSerial driverParallel driverFUNCTIONDriver for TRG, SRG1, SRG2, RST1, RST2Driver for IAG1, IAG2, ABG1, ABG2Figure 17. Typical Application Circuit Diagram2-16POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com TC215 1024-×1024-PIXEL CCD IMAGE SENSOR SOCS014B – AUGUST 19 – REVISED DECEMBER 1991MECHANICAL DATAThe package for the TC215 consists of a ceramic base, a glass window, and a 24-lead frame. The glass window issealed to the package by an epoxy adhesive. The package leads are configured in a dual in-line organization andfit into mounting holes with 2,54 mm (0.1 in) center-to-center spacings.30,91 (1.217)30,05 (1.183)2,67 (0.105) NOM12,50 (0.492) NOM2,00 (0.079)NOM DIA6,80 (0.268)5,80 (0.228)Optical CenterandPackage Center(see Note C)T.P.+0.01(+0.0004)22,83 (0.9)22,38 (0.881)2,54 (1.000)4,93 (0.194) MAX3,81 (0.150) NOM0,33 (0.013)0,17 (0.007)20,93 (0.824)20,83 (0.820)23,29 (0.917)22,43 (0.883)20,93 (0.824)20,83 (0.820)1,40 (0.055)0, (0.025)6,30 (0.248)4,70 (0.185)2,54 (0.100)ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHESNOTES:A.Each pin centerline is located within 2,54 mm (0.1 inch) of its true longitudinal position.B.The center of the package and the center of the image area are not coincident.C.Maximum rotation is ±3.5°.7/94POST OFFICE BOX 655303 DALLAS, TEXAS 75265•2-17元器件交易网www.cecb2b.com SOCS014B – AUGUST 19 – REVISED DECEMBER 19912-18POST OFFICE BOX 655303 DALLAS, TEXAS 75265•元器件交易网www.cecb2b.com
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